SPN7510
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,R
L
=1.6Ω
I
D
≡30A,V
GEN
=10V
R
G
=10Ω
V
DS
=25V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=100V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
= 150 °C
V
GS
= 10V,I
D
=30A
V
GS
= 4.5V,I
D
=16A
V
DS
=10V,I
D
=30A
I
S
=30A,V
GS
=0V
100
1.0
3.0
±100
10
100
16
21
52
1.3
69
12
39
5690
540
605
12
75
220
250
V
nA
uA
mΩ
S
V
V
DS
=80V,V
GS
=4.5V
I
D
= 30A
111
nC
9100
pF
nS
2009/06/15
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
