SPN7400
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
=24V,V
GS
=0.0V
V
DS
=24V,V
GS
=0.0V
T
J
=55℃
V
DS
≧4.5V,V
GS
=10V
V
DS
≧4.5V,V
GS
=4.5V
V
GS
= 10V,I
D
=2.8A
V
GS
=4.5V,I
D
=2.3A
V
GS
=2.5V,I
D
=1.5A
V
DS
=4.5V,I
D
=2.8A
I
S
=1.25A,V
GS
=0V
30
0.8
1.6
±100
1
10
6
4
0.062
0.070
0.095
4.6
0.82
0.077
0.085
0.110
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=15,V
GS
=4.5V
I
D
≡2.0A
V
DS
=15,V
GS
=0V
f =1MHz
4.2
0.6
1.5
350
55
41
2.5
2.5
20
4
6
nC
pF
V
DD
=15,R
L
=10Ω
V
GEN
=10V,R
G
=3Ω
ns
2006/03/20
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
