SPN7002L
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN7002L is the N-Channel enhancement mode
field effect transistors are produced using high cell
density DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to
300mA DC and can deliver pulsed currents up to 0.8A.
These products are particularly suited for low voltage,
low current applications such as small servo motor
control, power MOSFET gate drivers, and other
switching applications.
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
FEATURES
50V/0.30A , R
DS(ON)
= 3.5Ω@V
GS
=10V
50V/0.25A , R
DS(ON)
= 5.5Ω@V
GS
=4.5V
50V/0.05A , R
DS(ON)
= 7.5Ω@V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
2009/03/10
Ver.1
Page 1