SPN7002
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, I
D
= 0.5 A
R
G
= 4.7Ω V
GS
= 4.5 V
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 5 V
1.4
0.8
0.5
43
20
6
5
15
7
8
20
60
30
10
20
ns
pF
2.0
nC
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
R
DS(on)
V
DS
=0V,V
GS
=±20V
V
DS
=48V,V
GS
=0V
V
DS
=48V,V
GS
=0V
T
J
=55℃
V
GS
=10V,I
D
=0.50A
V
GS
= 5V,I
D
=0.30A
60
1.0
1.7
2.5
±100
1
10
2.5
3.3
6.0
7.0
0.35
1.4
1.5
V
nA
uA
Ω
A
A
S
V
Symbol
Conditions
Min.
Typ
Max.
Unit
I
SD
I
SDM
(2)
Gfs(1) V
DS
= 10 V, I
D
= 0.5 A
V
SD
(1) V
GS
= 0 V, I
S
= 0.12A
0.6
0.85
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
(1) Pulsed: Pulse duration = 300
μs,
duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
2013/11/12
Ver.4
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
