SPN6562
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6562 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
30V/2.8A,R
DS(ON)
= 65mΩ@V
GS
=10V
30V/2.3A,R
DS(ON)
= 75mΩ@V
GS
=4.5V
30V/1.5A,R
DS(ON)
= 105mΩ@V
GS
=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-6L package design
PIN CONFIGURATION( SOT-23-6L )
PART MARKING
2006/08/15
Ver.1
Page 1