SPN6338
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
= 250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
= 24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V
T
J
=55℃
V
DS
≥
4.5V,V
GS
=5V
V
GS
=4.5V,I
D
=0.95A
V
GS
=2.5V,I
D
=0.75A
V
GS
=1.8V,I
D
=0.65A
V
DS
=10V,I
D
=0.4A
I
S
=0.15A,V
GS
=0V
30
0.35
1.0
30
1
5
0.7
0.45
0.50
0.70
1.0
0.8
0.55
0.65
0.85
1.2
V
uA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,V
GS
=4.5V,
I
D
≡0.6A
1.2
0.2
0.3
7.2
17
1.6
5
8
10
1.2
1.5
nC
VDS=10V, VGS=0V
f=1MHz
V
DD
=10V,R
L
=10Ω ,
I
D
≡0.5A
V
GEN
=4.5V ,R
G
=6Ω
pF
10
15
18
2.8
ns
2013/06/24
Ver.
Preliminary
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
