SPN6099
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6099 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
60V/80A,R
DS(ON)
= 4.0mΩ@V
GS
= 10V
60V/20A,R
DS(ON)
= 4.2mΩ@V
GS
= 6.0V
60V/10A,R
DS(ON)
= 4.4mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L package design
APPLICATIONS
DC/DC Converter
Load Switch
SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
PART MARKING
2009 / 04 / 10
Ver.1
Page 1