SPN4920A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
30
V
1.0
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=30V,VGS=0V
VDS=30V,VGS=0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
IDSS
5
TJ=85℃
On-State Drain Current
ID(on)
VDS≥5V,VGS =10V
20
A
VGS= 10V,ID=6.8A
VGS=4.5V,ID=5.8A
0.026
0.036
0.035
0.045
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=6.2A
IS=2.0A,VGS =0V
13
S
VSD
0.8
1.2
15
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
td(on)
tr
10
1.8
2.3
8
VDS=20V,VGS=10V
ID= 7.2A
nC
nS
15
25
35
20
Turn-On Time
Turn-Off Time
VDD=20V,RL=20Ω
ID≡1.0A,VGEN=10V
RG=6Ω
12
15
10
td(off)
tf
2007/ 09 / 30 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
