SPN4906
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4906 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
40V/6.0A,R
DS(ON)
= 45mΩ@V
GS
= 10V
40V/5.0A,R
DS(ON)
= 54mΩ@V
GS
= 4.5V
40V/4.5A,R
DS(ON)
= 83mΩ@V
GS
= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/07/20
Ver.1
Page 1