SPN4946
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
60
V
0.8
2.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
IDSS
5
TJ=85℃
On-State Drain Current
ID(on)
VDS≥5V,VGS =10V
30
A
VGS= 10V,ID=10A
VGS=4.5V,ID=6A
0.038
0.042
0.044
0.050
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=5.3A
IS=2.0A,VGS =0V
24
S
VSD
0.8
1.2
15
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
10
3.5
3.6
890
85
VDS=30V,VGS=5V
ID= 5.3A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=30V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
48
10
15
20
35
15
Turn-On Time
Turn-Off Time
VDD=30V,RL=6.8Ω
ID≡4.4A,VGEN=10V
RG=1Ω
12
nS
td(off)
tf
25
10
2009/ 03/ 25 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
