SPN4900
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4900 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
60V/5.3A,R
DS(ON)
= 118mΩ@V
GS
= 10V
60V/4.7A,R
DS(ON)
= 125mΩ@V
GS
= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/ 11/ 10
Ver.1
Page 1