SPN4850
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
60
V
1.0
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=48V,VGS=0V
VDS=48V,VGS=0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
IDSS
5
TJ=85℃
On-State Drain Current
ID(on)
VDS≥5V,VGS =10V
25
A
VGS= 10V,ID=7.2A
VGS=4.5V,ID=6.8A
0.023
0.027
0.027
0.032
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=6.2A
IS=1.7A,VGS =0V
25
S
VSD
0.8
1.2
30
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
25
4.2
5.3
950
180
115
10
VDS=30V,VGS=10V
ID= 6A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
1400
VDS=30VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
20
20
50
25
Turn-On Time
Turn-Off Time
VDD=30V,RL=30Ω
ID≡1.0A,VGEN=10V
RG=6Ω
10
nS
td(off)
tf
25
12
2009 / 04 / 05 Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
