SPN4526
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
40
V
0.5
1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=40V,VGS=0V
VDS=40V,VGS=0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
10
TJ=85℃
ID(on)
VDS= 5V,VGS =4.5V
10
A
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
0.020
0.023
0.027
0.025
0.030
0.036
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=6.2A
IS=2.3A,VGS =0V
13
S
VSD
0.8
1.2
14
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
10
2.8
3.2
850
110
75
6
VDS=20V,VGS=4.5V
ID= 5A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=20V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
td(on)
tr
12
20
36
12
Turn-On Time
Turn-Off Time
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
10
20
6
nS
td(off)
tf
2009/ 02/ 20 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
