SPN4506
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,R
L
=4Ω
I
D
≡5.0A,V
GEN
=10V
R
G
=1Ω
V
DS
=20V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=40V,V
GS
=0V
V
DS
=40V,V
GS
=0V
T
J
=85℃
V
DS
= 5V,V
GS
=4.5V
V
GS
= 10V,I
D
=10A
V
GS
=4.5V,I
D
= 8A
V
GS
=2.5V,I
D
= 6A
V
DS
=15V,I
D
=6.2A
I
S
=2.3A,V
GS
=0V
40
0.5
1.0
±100
1
10
10
0.007
0.008
0.013
13
0.8
18
6.5
5.8
1850
250
155
10
15
30
12
15
25
45
16
0.010
0.012
0.016
1.2
25
V
nA
uA
A
Ω
S
V
V
DS
=20V,V
GS
=4.5V
I
D
= 5A
nC
pF
nS
2009/ 08/ 20
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
