SPN4412B
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4412B is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
30V/6.8A,R
DS(ON)
= 35mΩ@V
GS
= 10V
30V/5.6A,R
DS(ON)
= 42mΩ@V
GS
= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2011/ 03/ 25
Ver.0
(Preliminary)
Page 1