SPN3456
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3456 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
30V/6.0A,R
DS(ON)
= 40mΩ@V
GS
=10V
30V/5.0A,R
DS(ON)
= 50mΩ@V
GS
=4.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2013/08/12
Ver.2
Page 1