SPN3406
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
30
V
1.0
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=24V,VGS=1.0V
VDS=24V,VGS=0.0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
IDSS
10
TJ=55℃
VDS≧4.5V,VGS=4.5V
On-State Drain Current
ID(on)
10
A
VGS = 10V,ID=4.0A
VGS =4.5V,ID=3.6A
0.028
0.035
0.040
0.050
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=4.5V,ID=5.4A
IS=1.7A,VGS=0V
12
S
VSD
0.8
1.2
18
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
10
1.6
3.2
450
240
38
VDS=15VGS=10V
ID≡6.7A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=15VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
7
15
20
40
20
Turn-On Time
Turn-Off Time
VDD=15RL=15
ID≡1.0A,VGEN=10
RG=6Ω
10
ns
td(off)
tf
20
11
2006/09/18 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
