SPN3400
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3400 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
30V/5.4A,R
DS(ON)
= 38mΩ@V
GS
=10V
30V/4.6A,R
DS(ON)
= 42mΩ@V
GS
=4.5V
30V/3.8A,R
DS(ON)
= 55mΩ@V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2009/07/05
Ver.3
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