SPN30T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
=125℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=20A
V
GS
= 4.5V,I
D
=15A
V
DS
=5V,I
D
=3A
I
S
=1A,V
GS
=0V
100
1
2.5
±100
10
100
22
45
50
68
1.2
V
nA
uA
A
mΩ
mΩ
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V, I
D
=1A,
V
GEN
=10V
R
G
=3.3Ω
V
DS
=15V, V
GS
=0V
f=1MHz
V
DS
=15V, V
GS
=4.5V
I
D
= 15A
55
7.5
7
3850
137
82
19
4
84
5
nS
pF
nC
2012/05/30
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
