SPN3009
N-Channel Enhancement Mode MOSFET
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Single Pulse Avalanche Energy
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max. Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
EAS
V
DS
=0V,V
GS
=±20V
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V, T
J
=55℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=30A
V
GS
=4.5V,I
D
=15A
V
DS
=5V,I
D
=30A
I
S
=1A,V
GS
=0V
V
DD
=25V, L=0.1mH,
I
AS
=20A
30
1.0
2.5
±100
1
5
51
7.5
11
42
45
9
13.5
1
V
nA
uA
A
mΩ
S
V
mJ
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=15V,V
GS
=4.5V
I
D
= 15A
10.6
4.2
4
1127
194
78
6.4
13
127
45
18
nS
70
22.5
8
pF
nC
V
DS
=15V
GS
=0V
f=1MHz
V
DD
=15V,
I
D
=15A,V
GEN
=10V
R
G
=3.3Ω
TYPICAL CHARACTERISTICS
2011/08/22
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
