SPN2318
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
40
V
0.5
1.2
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS=40V,VGS=0V
VDS=40V,VGS=0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
5
TJ=85℃
ID(on)
VDS= 5V,VGS =4.5V
10
A
VGS= 10V,ID=3.9A
VGS=4.5V,ID=3.5A
VGS=2.5V,ID=2.0A
0.050
0.056
0.088
0.056
0.062
0.095
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=6.2A
IS=2.3A,VGS =0V
13
S
VSD
0.8
1.2
24
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
td(on)
tr
16
3
VDS=15V,VGS=10V
ID= 2A
nC
nS
2.5
15
6
20
12
20
80
Turn-On Time
Turn-Off Time
VDD=15V,RL=15Ω
ID≡1.0A,VGEN=10V
RG=6Ω
td(off)
tf
10
40
2009/07/15 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
