SPN2342
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=55℃
V
DS
≥5V,V
GS
=4.5V
V
GS
= 4.5V,I
D
=5.0A
V
GS
= 2.5V,I
D
=4.5A
V
GS
= 1.8V,I
D
=4.0A
V
DS
=15V,I
D
=5.0A
I
S
=1.0A,V
GS
=0V
20
0.4
1.0
±100
1
10
6
0.026
0.029
0.035
30
0.8
0.035
0.040
0.048
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,V
GS
=4.5V
I
D
≡5.0A
10
1.4
2.1
600
120
100
15
13
nC
V
DS
=10V,V
GS
=0V
f=1MHz
pF
25
60
65
40
ns
V
DD
=10V,R
L
=10Ω
I
D
≡1.0A,V
GEN
=4.5V
R
G
=6Ω
40
45
30
2006/05/30
Ver.1
Page 3