SPN1443
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
30
V
1.0
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=30V,VGS=1.0V
VDS=30V,VGS=0.0V
TJ=55℃
±100
1
nA
uA
Zero Gate Voltage Drain Current
IDSS
10
VDS≧4.5V,VGS=10V
6
4
On-State Drain Current
ID(on)
A
VDS≧4.5V,VGS=4.5V
VGS = 10V,ID=2.8A
VGS =4.5V,ID=2.3A
0.050
0.075
0.065
0.090
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=4.5V,ID=2.8A
IS=1.25A,VGS=0V
4.6
S
VSD
0.82
1.2
10
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
4.5
0.8
1.0
240
110
17
8
VDS=15VGS=10V
ID≡2.5
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=15VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
20
30
35
20
Turn-On Time
Turn-Off Time
VDD=15RL=15
ID≡1.0A,VGEN=10
RG=6Ω
12
17
8
ns
td(off)
tf
2006/03/20 Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
