SPN1423
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=55℃
V
DS
≧5V,V
GS
=4.5V
V
DS
≧5V,V
GS
=2.5V
V
GS
=4.5V,I
D
=2.8A
V
GS
=2.5V,I
D
=2.2A
V
DS
=5V,I
D
=2.8A
I
S
=1.6A,V
GS
=0V
20
0.45
1.2
±100
1
10
5
4
0.055
0.075
10
0.85
0.090
0.100
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,V
GS
=4.5V
I
D
≡2.8A
5.4
0.65
1.4
340
115
33
12
10
nC
V
DS
=10V,V
GS
=0V
f=1MHz
pF
25
60
60
25
ns
V
DD
=10V,R
L
=5.5Ω
I
D
≡2.8A,V
GEN
=4.5V
R
G
=6Ω
36
34
10
2005/05/25
Ver.1
Page 3