SPN1423A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=6V,R
L
=6Ω
I
D
≡1.0A,V
GEN
=4.5V
R
G
=6Ω
V
DS
=6V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=55℃
V
DS
≦5V,V
GS
=4.5V
V
GS
=4.5V,I
D
=4.0A
V
GS
=2.5V,I
D
=3.4A
V
GS
=1.8V,I
D
=2.8A
V
GS
=1.25V,I
D
=1.0A
V
DS
=5V,I
D
=-3.6A
I
S
=1.6A,V
GS
=0V
20
0.4
1.0
±100
1
5
6
0.065
0.075
0.090
0.120
10
0.8
4.8
1.0
1.0
485
85
40
8
12
30
12
14
18
35
16
0.080
0.090
0.110
0.140
1.2
8
V
nA
uA
A
Ω
S
V
V
DS
=6V,V
GS
=4.5V
I
D
≡2.8A
nC
pF
ns
2006/03/20
Ver.3
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
