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SPN09T10T251TGB 参数 Datasheet PDF下载

SPN09T10T251TGB图片预览
型号: SPN09T10T251TGB
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 10 页 / 352 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
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SPN09T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
Powered System
The SPN09T10 is the N-Channel logic enhancement mode
DC/DC Converter
power field effect transistor which is produced using super
Load Switch
high cell density DMOS trench technology. The SPN09T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast switching
speed.
FEATURES
100V/8A,R
DS(ON)
=
160mΩ@V
GS
= 10V
High density cell design for
extremely low RDS (ON)
Exceptional on-resistance and
maximum DC current
capability
TO-252,TO-251,TO-263
package design
PIN CONFIGURATION
TO-251
TO-252
TO-263
G D
S
PART MARKING
SPN09T10
AAAAAA
BBBBBB
A: Lot Code
B: Date Code
2012/07/03
Ver.5
Page 1