SPC6605
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V T
J
=55℃
V
DS
=-20V,V
GS
=0V T
J
=55℃
V
DS
≥
4.5V,V
GS
= 4.5V
V
DS
≤
-4.5V,V
GS
=-4.5V
V
GS
=4.5V,I
D
=3.6A
V
GS
=-4.5V,I
D
=-2.4A
V
GS
=2.5V,I
D
=3.1A
V
GS
=-2.5V,I
D
=-2.0A
V
DS
=5V,I
D
=-3.4A
V
DS
=-5V,I
D
=-2.4A
I
S
=1.6A,V
GS
=0V
I
S
=-1.6A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
0.45
-0.45
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.2
-1.2
±100
±100
1
-1
10
-10
0.085
0.115
0.100
0.165
10
6.5
0.85
-0.8
4.4
7.5
0.6
1
1.9
3
145
7.5
100
550
50
55
5.2
8.5
37
18
15
22
5.7
10
0.097
0.128
0.113
0.188
1.2
-1.2
V
nA
uA
A
Ω
S
V
6
-6
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
t
d(on)
gfs
V
SD
N-Channel
V
DS
=10V,V
GS
=4.5V, I
D
=3.6A
P-Channel
V
DS
=-16V,V
GS
=-4.5V ,I
D
=-2.A
nC
N-Channel
V
DS
=10V,V
GS
=0V, f=1.0MHz
P-Channel
V
DS
=-20V,V
GS
=0V,f=1.0MHz
pF
N-Channel
V
DD
=10V,R
L
=2.8Ω ,I
D
=3.6A
V
GEN
=4.5V ,R
G
=6Ω
P-Channel
V
DD
=-10V,R
L
=10Ω ,I
D
=-1.0A
V
GEN
=-4.5V ,R
G
=3.3Ω
nS
2011/8/1
Preliminary
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
