SPC6604
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V T
J
=55℃
V
DS
=-20V,V
GS
=0V T
J
=55℃
V
DS
≥
4.5V,V
GS
= 10V
V
DS
≤
-4.5V,V
GS
=-10V
V
GS
=4.5V,I
D
=4.0A
V
GS
=-4.5V,I
D
=-3.4A
V
GS
=2.5V,I
D
=3.4A
V
GS
=-2.5V,I
D
=-2.4A
V
GS
=1.8V,I
D
=2.8A
V
GS
=-1.8V,I
D
=-1.7A
V
GS
=1.25V,I
D
=1.0A
V
GS
=-1.25V,I
D
=-1.0A
V
DS
=5V,I
D
=-3.6A
V
DS
=-5V,I
D
=-2.8A
I
S
=1.6A,V
GS
=0V
I
S
=-1.5A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
0.4
-0.35
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.0
-0.8
±100
±100
1
-1
10
-10
0.040
0.068
0.046
0.090
0.056
0.113
0.105
0.185
10
6
0.8
-0.8
4.8
4.8
1.0
1.0
1.0
1.0
8
10
12
13
30
18
12
15
0.050
0.085
0.060
0.110
0.075
0.130
0.120
0.200
1.2
-1.2
8
8
V
nA
uA
A
6
-6
Drain-Source On-Resistance R
DS(on)
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gfs
V
SD
S
V
Q
g
Q
gs
Q
gd
t
d(on)
N-Channel
V
DS
=6V,V
GS
=4.5V, I
D
≡2.8A
P-Channel
V
DS
=-6V,V
GS
=-4.5V ,I
D
≡-2.8A
nC
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
N-Channel
V
DD
=6V,R
L
=6Ω ,I
D
≡1.0A
V
GEN
=4.5V ,R
G
=6Ω
P-Channel
V
DD
=-6V,R
L
=6Ω ,I
D
≡-1.0A
V
GEN
=-4.5V ,R
G
=6Ω
14
16
18
23
35
25
16
20
nS
2006/03/20
Ver.3
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
