SPC6602
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown
Voltage
VGS=0V,ID= 250uA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1
1
V(BR)DSS VGS=0V,ID=-250uA
V
VDS=VGS,ID=250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=0V,VGS=±20V
VDS= 24V,VGS=0V
VDS=-24V,VGS=0V
VDS= 24V,VGS=0V TJ=55℃
VDS=-24V,VGS=0V TJ=55℃
VDS≥ 5V,VGS = 10V
VDS≤ -5V,VGS =-10V
VGS= 10V,ID= 2.8A
VGS=-10V,ID=-2.8A
VGS= 4.5V,ID= 2.3A
VGS=-4.5V,ID=-2.5A
VDS=4.5V,ID=2.8A
VDS=-10V,ID=-2.8A
IS= 1.25A,VGS =0V
IS=-1.2A,VGS =0V
3
-3
±100
±100
1
-1
10
-10
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
nA
uA
A
Zero Gate Voltage Drain
Current
IDSS
6
-6
On-State Drain Current
ID(on)
0.043 0.060
0.088 0.105
0.056 0.080
0.118 0.135
4.6
Drain-Source On-Resistance RDS(on)
Ω
Forward Transconductance
gfs
S
4
0.8
-0.8
1.2
-1.2
Diode Forward Voltage
Dynamic
VSD
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.5
5.8
0.8
0.8
1.0
1.5
8
9
12
9
10
10
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
N-Channel
VDS=15 ,VGS=4.5V , ID≡2.0A
P-Channel
nC
nS
Gate-Source Charge
Gate-Drain Charge
VDS=-15V ,VGS=-4.5V , ID≡-2.0A
20
20
30
20
35
35
20
20
N-Channel
VDD=15 , RL=10Ω
VGEN=10V , RG=3Ω
Turn-On Time
Turn-Off Time
17
18
8
P-Channel
VDD=-15V , RL=15Ω
VGEN=-10V , RG=3Ω
td(off)
tf
6
2010/10/28 Ver.5
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
