SPC6601
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=0V,V
GS
=±12V
V
DS
= 24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V T
J
=55℃
V
DS
=-24V,V
GS
=0V T
J
=55℃
V
DS
≥
5V,V
GS
= 10V
V
DS
≤
-5V,V
GS
=-10V
V
GS
= 10V,I
D
= 2.8A
V
GS
=-10V,I
D
=-2.8A
V
GS
= 4.5V,I
D
= 2.3A
V
GS
=-4.5V,I
D
=-2.5A
V
GS
= 2.5V,I
D
= 1.5A
V
GS
=-2.5V,I
D
=-1.5A
V
DS
=4.5V,I
D
=2.8A
V
DS
=-10V,I
D
=-2.8A
I
S
= 1.25A,V
GS
=0V
I
S
=-1.2A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
0.8
-0.4
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.6
-1.0
±100
±100
1
-1
10
-10
0.048
0.077
0.054
0.092
0.079
0.118
4.6
4
0.8
-0.8
4.2
5.8
0.6
0.8
1.5
1.5
2.5
6
2.5
3.9
20
40
4
15
0.068
0.105
0.078
0.120
0.108
0.150
1.2
-1.2
6
V
nA
uA
A
6
-6
Drain-Source On-Resistance R
DS(on)
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gfs
V
SD
S
V
Q
g
Q
gs
Q
gd
t
d(on)
N-Channel
V
DS
=15 ,V
GS
=4.5V , I
D
≡2.0A
P-Channel
V
DS
=-15V ,V
GS
=-4.5V , I
D
≡-2.0A
N-Channel
V
DD
=15 , R
L
=10Ω
V
GEN
=10V , R
G
=3Ω
P-Channel
V
DD
=-15V , R
L
=15Ω
V
GEN
=-10V , R
G
=3Ω
nC
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
nS
2006/03/20
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
