SPC6332
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V T
J
=55℃
V
DS
=-20V,V
GS
=0V T
J
=55℃
V
DS
≥
4.5V,V
GS
=5V
V
DS
≤
-4.5V,V
GS
=-5V
V
GS
=4.5V,I
D
=0.95A
V
GS
=-4.5V,I
D
=-1.0A
V
GS
=2.5V,I
D
=0.75A
V
GS
=-2.5V,I
D
=-0.8A
V
GS
=1.8V,I
D
=0.65A
V
GS
=-1.8V,I
D
=-0.5A
V
DS
=10V,I
D
=1.2A
V
DS
=-10V,I
D
=-1.0A
I
S
=0.5A,V
GS
=0V
I
S
=-0.5A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
0.35
-0.35
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.0
-1.0
100
-100
1
-1
5
-5
0.26
0.42
0.32
0.58
0.42
0.75
2.6
1.5
0.8
-0.8
1.2
1.1
0.2
0.3
0.3
0.2
15
18
20
25
25
20
12
12
0.38
0.52
0.45
0.70
0.80
0.95
1.2
-1.2
2.0
1.8
V
nA
uA
A
2
-2
Drain-Source On-Resistance R
DS(on)
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gfs
V
SD
S
V
Q
g
Q
gs
Q
gd
t
d(on)
N-Channel
V
DS
=10V,V
GS
=4.5V, I
D
≡1.2A
P-Channel
V
DS
=-10V,V
GS
=-4.5V ,I
D
≡-1.0A
nC
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
N-Channel
V
DD
=10V,R
L
=20Ω ,I
D
≡0.5A
V
GEN
=4.5V ,R
G
=6Ω
P-Channel
V
DD
=-10V,R
L
=20Ω ,I
D
≡-0.5A
V
GEN
=-4.5V ,R
G
=6Ω
25
30
30
40
40
30
20
20
nS
2011/04/07
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
