SPC5604
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( NMOS )
(T =25℃ Unless otherwise noted)
A
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
(BR)DSS
GS(th)
V
V
V
GS=0V,I
D
=250uA
40
V
V
DS=VGS,I
D=250uA
0.5
1.0
Gate Leakage Current
IGSS
DS=0V,VGS=±20V
DS=32V,VGS=0V
DS=32V,VGS=0V
±100
1
nA
uA
V
V
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
10
T
J
=85℃
I
D(on)
V
DS= 5V,VGS =4.5V
10
A
V
V
V
GS= 10V,I
GS=4.5V,I
GS=2.5V,I
D=10A
D= 8A
D= 6A
0.018
0.022
0.026
0.024
0.028
0.032
Drain-Source On-Resistance
R
DS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
V
DS=15V,I
D
=6.2A
13
S
V
SD
IS
=2.3A,VGS =0V
0.8
1.2
14
V
Dynamic
Total Gate Charge
Qg
10
2.8
3.2
850
110
75
6
V
DS=20V,VGS=4.5V
= 5A
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qgs
nC
pF
ID
Q
gd
iss
oss
rss
d(on)
C
V
DS=20V,VGS=0V
Output Capacitance
Reverse Transfer Capacitance
C
f=1MHz
C
t
12
20
36
12
Turn-On Time
Turn-Off Time
V
DD=20V,R
≡5.0A,VGEN=10V
=1Ω
L
=4Ω
t
r
10
20
6
ID
nS
t
d(off)
RG
t
f
2012/10/22 Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
