SPC4516
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC4516 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
30V/8.5A,R
DS(ON)
= 14mΩ@V
GS
= 10V
30V/7.8A,R
DS(ON)
= 20mΩ@V
GS
= 4.5V
P-Channel
-30V/-7.2A,R
DS(ON)
= 25mΩ@V
GS
=- 10V
-30V/-5.6A,R
DS(ON)
= 40mΩ@V
GS
=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/03/05
Ver.1
Page 1