SPC4527
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( PMOS )
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-40
V
-0.8
-2.5
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=-36V,VGS=0V
VDS=-36V,VGS=0V
±100
-1
nA
uA
Zero Gate Voltage Drain Current
IDSS
-10
TJ=85℃
On-State Drain Current
ID(on) VDS= -5V,VGS =-4.5V
-10
A
VGS=-10V,ID=-10A
RDS(on)
0.032
0.036
0.038
0.046
Drain-Source On-Resistance
Ω
VGS=-4.5V,ID=- 8A
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-15V,ID=-5.7A
IS=-2.3A,VGS =0V
13
S
VSD
-0.8
-1.2
20
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
13
4.5
6.5
1100
145
115
40
VDS=-20V,VGS=-4.5V
ID= -5.0A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=-20V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
td(on)
tr
80
100
60
Turn-On Time
Turn-Off Time
VDD=-20V,RL=4Ω
ID≡-5.0A,VGEN=-4.5V
RG=1Ω
55
nS
td(off)
tf
30
12
20
2009/02/15 Ver.1
Page 4
SYNC-POWER [ SYNC POWER CROP. ]
