DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current,The breakover
symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are
intended for use in thyrisitors phase control, circuits for lamp dimming,universal
motor speed control, and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
Parameters
DB3 DC34
DB4
DB6
mW
Power Dissipation on Printed
Circuit(L=10mm)
Units
P
c
TA=50
tp=10u s
F=100Hz
150
I
TRM
T
STG
/
T
J
Repetitive Peak in-state
Current
2.0
2.0
2.0
1.6
A
Storage and Operating Junction Temperature
-40 to +125/-40 to 110
ELECTRCAL CHARACTERISTICS
Value
Symbols
Parameters
Test Conditions
DB3
c=22nF(Note 2)
VBO
Breakover Voltage(Note 2)
See diagram1
Min
Typ
Max
|+VBO|-
|-VBO|
|
Vo
IBO
tr
IB
V|
Dynamic Breakover
Voltage(Note 1)
Output Voltage(Note 1)
Breakover Current(Note 1)
Rise Time(Note 1)
Leakage Current(Note 1)
Breakover Voltage Symmetry
c=22nF(Note 2)
See diagram1
I=(
I
BO
to IF=10mA)
See diagram1
See diagram2
c=22nF(Note 2)
See Diagram 3
Min
Max
Typ
Max
5
100
1.5
10
V
A
S
A
Min
5
10
V
Max
28
32
36
DC34
30
34
38
3
DB4
35
40
45
DB6
56
60
70
4
V
V
Units
V
B
=0.5
V
BO
max
see diagram 1
Notes: 1. Electrical characteristics applicable in both forward and reverse directions.
2. Connected in parallel with the devices.
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