TP2522
Thermal Characteristics
Power Dissipation
@ TA = 25OC
ID
ID
θjc
θja
IDR*
(mA)
IDRM
(A)
Package
(continuous)* (pulsed)
OC/W
OC/W
(mA)
(A)
(W)
TO-243AA (SOT-89)
-26ꢀ
-2.ꢀ
1.6
15
78†
-26ꢀ
-2.ꢀ
*
ID (continuous) is limited by max rated T .
† Mounted on FR5 board, 25mm x 25mm jx 1.57mm.
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol Parameter
Min
-22ꢀ
-1.ꢀ
-
Typ
Max
-
Units
Conditions
BVDSS
VGS(th)
∆VGS(th)
IGSS
Drain-to-source breakdown voltage
-
-
-
-
-
V
VGS = ꢀV, ID = -2.ꢀmA
Gate threshold voltage
-2.4
4.5
-1ꢀꢀ
-1ꢀ
V
VGS = VDS, ID= -1.ꢀmA
Change in VGS(th) with temperature
Gate body leakage
mV/OC VGS = VDS, ID= -1.ꢀmA
-
nA
μA
VGS
=
2ꢀV, VDS = ꢀV
VGS = ꢀV, VDS = Max Rating
IDSS
Zero gate voltage drain current
-
V
= ꢀV, V = ꢀ.8 Max Rating,
TAGS= 125°C DS
-
-1.ꢀ
mA
A
-ꢀ.25
-ꢀ.75
-ꢀ.7
-2.1
1ꢀ
8.ꢀ
-
-
-
VGS = -4.5V, VDS = -25V
ID(ON)
ON-state drain current
VGS = -1ꢀV, VDS = -25V
VGS = -4.5V, ID = -1ꢀꢀmA
VGS = -1ꢀV, ID = -2ꢀꢀmA
VGS = -1ꢀV, ID = -2ꢀꢀmA
VDS = -25V, ID = -2ꢀꢀmA
15
12
1.7
-
Static drain-to-source ON-State
resistance
RDS(ON)
-
Ω
∆RDS(ON)
GFS
Change in RDS(ON) with temperature
Forward transconductance
Input capacitance
-
%/OC
1ꢀꢀ
25ꢀ
75
2ꢀ
1ꢀ
-
mmho
CISS
COSS
CRSS
td(ON)
tr
-
-
-
-
-
-
-
-
-
125
85
35
1ꢀ
15
2ꢀ
15
-1.8
-
VGS = ꢀV,
VDS = -25V,
f = 1.ꢀ MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
pF
ns
VDD = -25V,
ID = -ꢀ.75A,
RGEN = 25Ω
Rise time
-
td(OFF)
tf
Turn-OFF delay time
-
Fall time
-
VSD
Diode forward voltage drop
Reverse recovery time
-
V
VGS = ꢀV, ISD = -ꢀ.5A
VGS = ꢀV, ISD = -ꢀ.5A
trr
3ꢀꢀ
ns
Notes:
(1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
(2) All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
ꢀV
PULSE
1ꢀ%
GENERATOR
INPUT
RGEN
-1ꢀV
9ꢀ%
t(OFF)
t(ON)
td(ON)
D.U.T.
Output
td(OFF)
tF
tr
ꢀV
INPUT
9ꢀ%
9ꢀ%
RL
OUTPUT
1ꢀ%
1ꢀ%
VDD
VDD
2
SUPERTEX [ Supertex, Inc ]
