欢迎访问ic37.com |
会员登录 免费注册
发布采购

TP2522N8-G 参数 Datasheet PDF下载

TP2522N8-G图片预览
型号: TP2522N8-G
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型垂直DMOS场效应管 [P-Channel Enhancement Mode Vertical DMOS FETs]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 5 页 / 572 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号TP2522N8-G的Datasheet PDF文件第1页浏览型号TP2522N8-G的Datasheet PDF文件第3页浏览型号TP2522N8-G的Datasheet PDF文件第4页浏览型号TP2522N8-G的Datasheet PDF文件第5页  
TP2522  
Thermal Characteristics  
Power Dissipation  
@ TA = 25OC  
ID  
ID  
θjc  
θja  
IDR*  
(mA)  
IDRM  
(A)  
Package  
(continuous)* (pulsed)  
OC/W  
OC/W  
(mA)  
(A)  
(W)  
TO-243AA (SOT-89)  
-26ꢀ  
-2.ꢀ  
1.6  
15  
78†  
-26ꢀ  
-2.ꢀ  
*
ID (continuous) is limited by max rated T .  
† Mounted on FR5 board, 25mm x 25mm jx 1.57mm.  
Electrical Characteristics (TA = 25°C unless otherwise specified)  
Symbol Parameter  
Min  
-22ꢀ  
-1.ꢀ  
-
Typ  
Max  
-
Units  
Conditions  
BVDSS  
VGS(th)  
∆VGS(th)  
IGSS  
Drain-to-source breakdown voltage  
-
-
-
-
-
V
VGS = ꢀV, ID = -2.ꢀmA  
Gate threshold voltage  
-2.4  
4.5  
-1ꢀꢀ  
-1ꢀ  
V
VGS = VDS, ID= -1.ꢀmA  
Change in VGS(th) with temperature  
Gate body leakage  
mV/OC VGS = VDS, ID= -1.ꢀmA  
-
nA  
μA  
VGS  
=
2ꢀV, VDS = ꢀV  
VGS = ꢀV, VDS = Max Rating  
IDSS  
Zero gate voltage drain current  
-
V
= ꢀV, V = .8 Max Rating,  
TAGS= 125°C DS  
-
-1.ꢀ  
mA  
A
-ꢀ.25  
-ꢀ.75  
-ꢀ.7  
-2.1  
1ꢀ  
8.ꢀ  
-
-
-
VGS = -4.5V, VDS = -25V  
ID(ON)  
ON-state drain current  
VGS = -1ꢀV, VDS = -25V  
VGS = -4.5V, ID = -1ꢀꢀmA  
VGS = -1ꢀV, ID = -2ꢀꢀmA  
VGS = -1ꢀV, ID = -2ꢀꢀmA  
VDS = -25V, ID = -2ꢀꢀmA  
15  
12  
1.7  
-
Static drain-to-source ON-State  
resistance  
RDS(ON)  
-
Ω
∆RDS(ON)  
GFS  
Change in RDS(ON) with temperature  
Forward transconductance  
Input capacitance  
-
%/OC  
1ꢀꢀ  
25ꢀ  
75  
2ꢀ  
1ꢀ  
-
mmho  
CISS  
COSS  
CRSS  
td(ON)  
tr  
-
-
-
-
-
-
-
-
-
125  
85  
35  
1ꢀ  
15  
2ꢀ  
15  
-1.8  
-
VGS = ꢀV,  
VDS = -25V,  
f = 1.ꢀ MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-ON delay time  
pF  
ns  
VDD = -25V,  
ID = -ꢀ.75A,  
RGEN = 25Ω  
Rise time  
-
td(OFF)  
tf  
Turn-OFF delay time  
-
Fall time  
-
VSD  
Diode forward voltage drop  
Reverse recovery time  
-
V
VGS = ꢀV, ISD = -ꢀ.5A  
VGS = ꢀV, ISD = -ꢀ.5A  
trr  
3ꢀꢀ  
ns  
Notes:  
(1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
(2) All A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
ꢀV  
PULSE  
1ꢀ%  
GENERATOR  
INPUT  
RGEN  
-1ꢀV  
9ꢀ%  
t(OFF)  
t(ON)  
td(ON)  
D.U.T.  
Output  
td(OFF)  
tF  
tr  
ꢀV  
INPUT  
9ꢀ%  
9ꢀ%  
RL  
OUTPUT  
1ꢀ%  
1ꢀ%  
VDD  
VDD  
2