TD9944
Electrical Characteristics (each device, @ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
240
0.6
Typ
Max
Unit
V
Conditions
VGS = 0V, ID = 2mA
VGS = VDS, ID= 1mA
VGS = VDS, ID= 1mA
VGS = ± 20V, VDS = 0V
2.0
-5.0
100
10
V
Change in VGS(th) with Temperature
Gate Body Leakage
mV/°C
nA
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.5
1.0
1.9
2.8
4.0
4.0
VGS = 4.5V, VDS = 25V
A
V
GS = 10V, VDS = 25V
VGS = 4.5V, ID = 250mA
GS = 10V, ID = 0.5A
Static Drain-to-Source
ON-State Resistance
RDS(ON)
6.0
6.0
1.4
Ω
V
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
VGS = 10V, ID = 0.5A
VDS = 25V, ID = 0.5A
Ω
300
600
65
m
125
70
25
10
10
20
20
1.8
VGS = 0V, VDS = 25V
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
35
pF
f = 1 MHz
10
VDD = 25V,
ID = 1.0A,
RGEN = 25Ω
Rise Time
ns
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 1.0A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2