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HV9103P 参数 Datasheet PDF下载

HV9103P图片预览
型号: HV9103P
PDF下载: 下载PDF文件 查看货源
内容描述: 高压开关模式控制器, MOSFET [High-Voltage Switchmode Controllers with MOSFET]
分类和应用: 开关高压控制器
文件页数/大小: 7 页 / 322 K
品牌: SUPERTEX [ Supertex, Inc ]
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HV9100/HV9102/HV9103  
Technical Description  
Preregulator  
Reference  
The preregulator/startup circuit for the HV910x consists of a high-  
voltage N-channel depletion-mode DMOS transistor driven by an  
error amplifier to form a controlled current path between the VIN  
terminal and the VDD terminal. Maximum current (about 20 mA)  
occurswhenVDD =0, withcurrentreducingasVDD rises. Thispath  
shuts off altogether when VDD rises to somewhere between 7.8  
and 9.4V, so that if VDD is held at 10 or 12V by an external source  
(generally the supply the chip is controlling) no current other than  
leakage is drawn through the high voltage transistor. This mini-  
mizes dissipation.  
The reference consists of a stable bandgap reference followed by  
a buffer amplifier which scales the voltage up to approximately  
4.0V. The scaling resistors of the reference buffer amplifier are  
trimmed during manufacture so that the output of the error  
amplifier when connected in a gain of -1 configuration is as close  
to 4.000V as possible. This nulls out any input offset of the error  
amplifier. As a consequence, even though the observed refer-  
encevoltageofaspecificpartmaynotbeexactly4V,thefeedback  
voltage required for proper regulation will be 4V.  
A resistor of approximately 50Kis placed internally between the  
output of the reference buffer amplifier and the circuitry it feeds  
(reference output pin and NON-INVERTING input to the error  
amplifier). Thisallowsoverridingtheinternalreferencewithalow-  
impedance voltage source 6V. Using an external reference  
reinstates the input offset voltage of the error amplifier, and its  
effect of the exact value of feedback voltage required. In general,  
because the reference voltage of the Supertex HV910x is not  
noisy, as some previous devices have been, overriding the  
reference should seldom be necessary.  
An external capacitor between VDD and VSS is generally required  
to store energy used by the chip during the time between shutoff  
of the high voltage path and the VDD supplys output rising enough  
totakeoverthepoweringofthechip. Thiscapacitorgenerallyalso  
servesastheoutputfiltercapacitorforthatoutputfromthesupply.  
1µF is generally sufficient to assure against double-starting.  
Capacitorsassmallas0.1µFcanworkwhenfasterresponsefrom  
the VDD line is required. Whatever capacitor is chosen should  
haveverygoodhighfrequencycharacteristics. Stackedpolyester  
or ceramic capacitors work well. Electrolytic capacitors are gen-  
erally not suitable.  
Because the reference is a high impedance node, and usually  
there will be significant electrical noise near it, a bypass capacitor  
betweenthereferencepinandVSS isstronglyrecommended. The  
reference buffer amplifier is intentionally compensated to be  
stable with a capacitive load of 0.01 to 0.1µF.  
A common resistor divider string is used to monitor VDD for both  
the undervoltage lockout circuit and the shutoff circuit of the high  
voltage FET. Setting the undervoltage sense point about 0.6V  
lower on the string than the FET shutoff point guarantees that the  
undervoltage lockout always releases before the FET shuts off.  
Error Amplifier  
The error amplifier is a true low-power differential input opera-  
tional amplifier intended for around-the-amplifier compensation.  
It is of mixed CMOS-bipolar construction: a PMOS input stage is  
used so the common-mode range includes ground and the input  
impedance is very high. This is followed by bipolar gain stages  
which provide high gain without the electrical noise of all-MOS  
amplifiers. The amplifier is unity-gain stable.  
Bias Circuit  
Anexternalbiasresistor, connectedbetweenthebiaspinandVSS  
isrequiredtosetcurrentsinaseriesofcurrentmirrorsusedbythe  
analogsectionsofthechip.Nominalexternalbiascurrentrequire-  
ment is 15 to 20µA, which can be set by a 390Kto 510KΩ  
resistorifa10VVDD isused, ora510Kto680Kresistorifa12V  
VDD is used. A precision resistor is NOT required; 5% is fine.  
Current Sense Comparators  
For extremely low power operation, the value of bias current can  
be reduced to as low as 5µA by further increases in the value of  
the bias resistor. This will reduce quiescent current by about a  
third, reduce bandwidth of the error amp by about half, and slow  
the current sense comparator by about 30%.  
The HV910x uses a true dual comparator system with indepen-  
dent comparators for modulation and current limiting. This allows  
thedesignergreaterlatitudeincompensationdesign,asthereare  
noclamps(exceptESDprotection)onthecompensationpin. Like  
the error amplifier, the comparators are of low-noise BiCMOS  
construction.  
Clock Oscillator  
The clock oscillator of the HV910x consists of a ring of CMOS  
inverters, timing capacitors, a capacitor discharge FET, and, in  
the 50% maximum duty cycle versions, a frequency dividing flip-  
flop. A single external resistor between the OSC In and OSC Out  
pins is required to set oscillator frequency (see Fig. 4). For the  
50%maximumdutycycleversionstheDischargepinisinternally  
connected to GND. For the 99% duty cycle version, Discharge’  
can either be connected to VSS directly or connected to VSS  
through a resistor used to set a deadtime.  
Remote Shutdown  
The shutdown and reset pins can be used to perform either  
latching or non-latching shutdown of a converter as required.  
These pins have internal current source pull-ups so they can be  
driven from open-drain logic. When not used, they should be left  
open, or connected to VDD  
.
Main Switch  
One difference exists between the Supertex HV910x and com-  
petitive parts. The oscillator of the HV910x is shut off when a  
shutoff command is received. This saves about 150µA of quies-  
cent current, which aids in situations where an absolute minimum  
of quiescent power dissipation is required.  
The main switch is a normal N-channel power MOSFET. Unlike  
thesituationwithcompetitivedevices,thebodydiodecanbeused  
if desired without destroying the chip.  
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