HV301/HV311
Electrical Characteristics
(-10V
≤
V
Symbol
Parameter
EE
≤
-90V, -40°C
≤
+85°C unless otherwise noted)
Typ
Max
Units
Conditions
Min
Supply
(Referenced to V
DD
pin)
V
EE
I
EE
I
EE
Supply Voltage
Supply Current
Sleep Mode Suppy Current
-90
600
400
-10
700
450
V
µA
µA
V
EE
= -48V, Mode = Limiting
V
EE
= -48V, Mode = Sleep
OV and UV Control
(Referenced to V
EE
pin)
V
UVH
V
UVL
V
UVHY
I
UV
V
OVH
V
OVL
V
OVHY
I
OV
UV High Threshold
UV Low Threshold
UV Hysteresis
UV Input Current
OV High Threshold
OV Low Threshold
OV Hysteresis
OV Input Current
1.26
1.16
100
1.0
1.26
1.16
100
1.0
V
V
mV
nA
V
V
mV
nA
V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+1.9V
Low to High Transition
High to Low Transition
Low to High Transition
High to Low Transition
Current Limit
(Referenced to V
EE
pin)
V
SENSE-CL
V
SENSE-CB
Current Limit Threshold Voltage
Circuit Breaker Threshold Voltage
40
80
50
100
60
120
mV
mV
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V
Gate Drive Output
(Referenced to V
EE
pin)
V
GATE
I
GATEUP
I
GATEDOWN
Maximum Gate Drive Voltage
Gate Drive Pull-Up Current
Gate Drive Pull-Down Current
8.5
50 0
40
10
12
V
µA
mA
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+ 1.9V, V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
, V
OV
= V
EE
+ 0.5V
Ramp Timing Control
(Test Conditions: C
LOAD
=100µF, C
RAMP
=10nF, V
UV
=V
EE
+1.9V, V
OV
=V
EE
+0.5V, External MOSFET is IRF530*)
I
RAMP
t
POR
t
RISE
t
LIMIT
t
PWRGD
V
RAMP
t
STARTLIMIT
t
CBTRIP
t
AUTO
Ramp Pin Output Current
Time from UV to Gate Turn On
Time from Gate Turn On to V
SENSE
Limit
Duration of Current Limit Mode
Time from Current Limit to PWRGD
Voltage on Ramp Pin in Current Limit Mode
Start Up Time Limit
Circuit Breaker Delay Time
Automatic Restart Delay TIme
80
2.0
16
2.0
400
5.0
5.0
3.6
100
120
5.0
10
µA
ms
µs
ms
ms
V
ms
µs
s
May be extended by external RC circuit
V
SENSE
= 0V
(See Note 1)
(See Note 2)
Power Good Output
(Referenced to V
EE
pin)
V
PWRGD(hi)
V
PWRGD(lo)
I
PWRGD(lk)
Applied Voltage to PWRGD
PWRGD Low Voltage
Maximum Leakage Current
90
0.5
<1.0
0.8
10
V
V
µA
PWRGD=Inactive
I
PWRGD
= 1mA, PWRGD=Active
PWRGD=Inactive, V
PWRGD
=90
Dynamic Characteristics
t
GATEHLOV
OV Comparator Transition
t
GATEHLUV
UV Comparator Transition
500
500
ns
ns
Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET. V
th
= 3V for an IRF530.
* IRF530 is a registered trademark of International Rectifier.
2
SUPERTEX [ Supertex, Inc ]
