DN3545
N-Channel Depletion-Mode
Vertical DMOS FET
Features
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High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Package Options
D
S G D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
G
D
S
TO-92
(front view)
TO-243AA
(top view)
Ordering Information
BV
DSX
/
BV
DGX
450V
R
DS(ON)
(max)
(min)
I
DSS
Package Options
TO-92
DN3545N3
TO-243AA (SOT-89)
DN3545N8
DN3545N8-G
20Ω
200mA
DN3545N3-G
-G indicates package is RoHS compliant (‘Green’)
SUPERTEX [ Supertex, Inc ]
