DN3535
Thermal Characteristics
Package
TO-243AA
†
I
D
(continuous)*
230mA
I
D
(pulsed)
500mA
Power Dissipation
@ T
A
= 25
°
C
1.6W
†
θ
jc
°
C/W
15
θ
ja
°
C/W
78
†
I
DR
*
230mA
I
DRM
500mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Drain-to-Souce Breakdown Voltage
Gate-to-Source OFF Voltage
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Min
350
-1.5
-3.5
4.5
100
1.0
1.0
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
800
200
360
40
10
15
20
20
30
1.8
200
10
1.1
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
mA
Ω
%/°C
mg
Conditions
V
GS
= -5.0V, I
D
= 1.0µA
V
DS
= 15V, I
D
= 10µA
V
DS
= 15V, I
D
= 10µA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 150mA
V
GS
= 0V, I
D
= 150mA
I
D
= 100mA, V
DS
=10V
V
GS
= -5.0V, V
DS
= 25V, f =1.0Mhz
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
0V
90%
10%
t
(ON)
INPUT
-10V
PULSE
GENERATOR
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
R
L
OUTPUT
D.U.T.
SUPERTEX [ Supertex, Inc ]
