DN3525
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-243AA
360mA
600mA
1.6W†
15
78†
360mA
600mA
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSX
Parameter
Min
Typ
Max
Unit
Conditions
Drain-to-Souce Breakdown Voltage
250
V
VGS = -5.0V, ID = 100µA
VDS = 15V, ID = 1.0mA
VDS = 15V, ID = 1.0mA
VGS = ±20V, VDS = 0V
VGS(OFF)
∆VGS(OFF)
IGSS
Gate-to-Source OFF Voltage
Change in VGS(OFF) with Temperature
Gate Body Leakage Current
-1.5
-3.5
4.5
100
1.0
1.0
V
mV/°C
nA
ID(OFF)
Drain-to-Source Leakage Current
µA
VGS = -5.0V, VDS = Max Rating
mA
VGS = -5.0V, VDS = 0.8 Max Rating
TA = 125°C
IDSS
Saturated Drain-to-Source Current
300
225
mA
VGS = 0V, VDS = 15V
VGS = 0V, ID = 200mA
RDS(ON)
Static Drain-to-Source
ON-State Resistance
6.0
1.1
Ω
∆RDS(ON)
GFS
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
VGS = 0V, ID = 200mA
ID = 150mA, VDS=10V
Ω
mg
CISS
COSS
CRSS
td(ON)
tr
270
20
350
60
20
20
25
25
40
1.8
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
VGS = -5.0V, VDS = 25V, f =1.0Mhz
5.0
VDD = 25V,
Rise Time
ID = 150mA,
ns
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
RGEN = 25Ω,
VGS = 0V to -10V
VGS = -5.0V, ISD = 150mA
VGS = -5.0V, ISD = 150mA
VSD
Diode Forward Voltage Drop
Reverse Recovery Time
V
trr
800
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
0V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
SUPERTEX [ Supertex, Inc ]
