DN3135
Thermal Characteristics
ID
ID
Power Dissipation
@TA = 25OC
1
Package
Θjc (OC/W) Θja (OC/W)
IDR
IDRM
(continuous)1
(pulsed)
TO-±36AB
7±2mA
135mA
322mA
322mA
2.36W
1.3W±
±22
34
352
97±
7±mA
322mA
322mA
TO-±43AA
Notes:
1. ID (continuous) is limited by max rated Tj.
135mA
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
-
Units
V
Conditions
BVDSX
Drain-to-source breakdown voltage
352
-
-
-
-
-
VGS = -5.2V, ID = 122µA
VDS = 15V, ID = 12µA
VGS(OFF) Gate-to-source OFF voltage
-1.5
-3.5
4.5
122
1.2
V
ΔVGS(OFF) Change in VGS(OFF) with temperature
-
-
-
mV/OC VDS = 15V, ID = 12µA
IGSS
Gate body leakage current
nA
µA
VGS = ±±2V, VDS = 2V
VDS = Max rating, VGS = -5.2V
ID(OFF)
Drain-to-source leakage current
VDS = 2.8 Max Rating,
-
182
-
-
-
-
1.2
-
mA
mA
Ω
VGS = -5.2V, TA = 1±5OC
IDSS
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
VGS = 2V, VDS = 15V
VGS = 2V, ID = 152mA
VGS = 2V, ID = 152mA
RDS(ON)
35
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.1
-
%/OC
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
142
-
62
6.2
1.2
-
mmho VDS = 12V, ID = 122mA
-
-
-
-
-
-
-
-
-
1±2
15
12
12
15
15
±2
1.8
-
VGS = -5.2V,
VDS = ±5V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
pF
ns
VDD = ±5V,
Rise time
-
ID = 152mA,
RGEN = ±5Ω,
VGS = 2v to -12V
td(OFF)
tf
Turn-OFF delay time
Fall time
-
-
VSD
Diode forward voltage drop
Reverse recovery time
-
V
VGS = -5.2V, ISD = 152mA
VGS = -5.2V, ISD = 152mA
trr
822
ns
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
2V
92%
INPUT
PULSE
GENERATOR
12%
-12V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tr
tF
VDD
2V
D.U.T.
12%
12%
INPUT
OUTPUT
92%
92%
±
SUPERTEX [ Supertex, Inc ]
