DN2625
Electrical Characteristics (cont) @25OC unless otherwise specified
Symbol Parameter
Min
Typ
Max
100
1.0
Units Conditions
IGSS
ID(OFF)
IDSS
Gate body leakage current
-
-
-
-
nA
µA
VGS = 20V, VDS = 0V
VDS = 250V, VGS = -5.0V
Drain-to-source leakage current
Saturated drain-to-source current
VDS = 250V, VGS = -5.0V,
TA = 125OC
-
-
-
200
µA
A
1.1
3.1
-
-
VGS = 0V, VDS = 15V
VGS = 0.9V, VDS = 15V with duty
cycle of 1%
IDS(PULSE) Pulsed drain-to-source current
RDS(ON) Static drain-to-source ON resistance
ΔRDS(ON) Change in RDS(ON) with temperature
3.3
A
-
-
3.5
1.1
-
Ω
VGS = 0V, ID = 1.0A
-
-
%/OC
VGS = 0V, ID = 200mA
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
1.0
-
mmho VDS = 10V, ID = 150mA
-
-
-
-
-
-
-
-
800
1000
210
70
VGS = -2.5V,
VDS = 25V,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
70
18
-
pF
10
VDD = 25V,
Rise time
-
20
ID = 150mA,
RGEN = 3.0Ω,
VGS = 0v to -10V
ns
V
td(OFF)
tf
Turn-OFF delay time
Fall time
-
10
-
20
VSD
Diode forward voltage drop
-
1.8
VGS = -2.5V, ISD = 150mA
Typical Performance Curves
Output Characteristics
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 2.0V
VGS = 1.5V
VGS = 1.0V
VGS = 0.5V
VGS = 0V
VGS = -0.5V
VGS = -1.0V
VGS = -1.5V
VGS = -2.0V
0.0
0
50
100
150
200
250
V
DS (V)
3