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DN2624N3 参数 Datasheet PDF下载

DN2624N3图片预览
型号: DN2624N3
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用: 晶体小信号场效应晶体管开关
文件页数/大小: 4 页 / 54 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号DN2624N3的Datasheet PDF文件第1页浏览型号DN2624N3的Datasheet PDF文件第2页浏览型号DN2624N3的Datasheet PDF文件第4页  
DN2624
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
TE –
SOLE
– OB
10
8
V
GS
= 0V
On-Resistance vs. Drain Current
BV
DSS
(normalized)
V
GS
= -3.5V
R
DS(on)
(ohms)
-50
0
50
100
150
6
1.0
4
2
0.9
0
0
0.2
0.4
0.6
0.8
1.0
T
J
(°C)
Transfer Characteristics
1.0
T
A
= -55°C
0.8
V
DS
= 10V
T
A
= 25°C
0.6
T
A
= 125°C
1.6
I
D
(amps)
V
(th)
and R
DS
Variation with Temperature
2.0
RDS (ON) @
VGS = 0V, ID = 200mA
1.6
8
V
GS(th)
(normalized)
I
D
(amperes)
1.4
1.2
1.2
0.8
1.0
VGS(OFF) @
VDS = 25V, ID = 10µA
0.8
0.4
0.4
0.2
0
-3
-2
-1
0
1
2
-50
0
50
100
150
0
V
GS
(Volts)
Capacitance Vs. Drain-to-Source Voltage
800
V
GS
= -10V
C
ISS
600
2
4
T
j
(°C)
Gate Drive Dynamic Characteristics
C (picofarads)
V
GS
(volts)
0
VDS = 25V
ID = 30mA
400
700pF
-2
200
-4
C
OSS
C
RSS
0
0
10
20
30
40
-6
0
1
2
3
4
5
620pf
V
DS
(Volts)
Q
C
(Nanocoulombs)
8-11
R
DS(ON)
(normalized)