N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BV
DSX
/
BV
DGX
240V
R
DS(ON)
(max)
4.0Ω
I
DSS
(min)
600mA
Order Number / Package
TO-92
DN2624N3
Die
DN2624ND
E–
ET
OL
BS
–O
DN2624
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
8
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSX
BV
DGX
±
20V
-55°C to +150°C
300°C
SGD
TO-92
Note:
See Package Outline section for dimensions.
8-9
SUPERTEX [ Supertex, Inc ]
