DN2540
Product Marking
L = Lot Number
DN
2540
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
YY = Year Sealed
WW = Week Sealed
DN2540N5
LLLLLLLLL
YYWW
= “Green” Packaging
3-Lead TO-92 (N3)
3-Lead TO-220 (N5)
DN5DW
W = Code for week sealed
3-Lead TO-243AA (N8)
Thermal Characteristics
ID
ID
Power Dissipation
(1)
Θjc
Θja
IDR
IDRM
(mA)
(continuous)(1)
(mA)
(pulsed)
(mA)
@TC = 25OC
(W)
Package
(OC/W)
(OC/W)
(mA)
TO-92
TO-220
120
500
170
500
500
500
1.0
15
1.6(2)
125
8.3
15
170
70
78(2)
120
500
170
500
500
500
TO-243AA
Notes:
(1) ID (continuous) is limited by max rated Tj.
(2) Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA @ 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units Conditions
BVDSX
Drain-to-source breakdown voltage
400
-
-
-
-
-
-
V
VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source OFF voltage
-1.5
-3.5
4.5
100
10
V
VDS = 25V, ID = 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature
-
-
-
mV/OC VDS = 25V, ID = 10µA
IGSS
Gate body leakage current
nA
µA
VGS = 20V, VDS = 0V
VDS = Max rating, VGS = -10V
ID(OFF)
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
VDS = 0.8 Max Rating,
-
150
-
-
-
1.0
-
mA
mA
Ω
VGS = -10V, TA = 125OC
IDSS
VGS = 0V, VDS = 25V
VGS = 0V, ID = 120mA
VGS = 0V, ID = 120mA
RDS(ON)
17
25
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
-
-
-
-
1.1
-
%/OC
GFS
CISS
COSS
CRSS
Forward transconductance
Input capacitance
325
200
12
1
mmho VDS = 10V, ID = 100mA
300
30
5
VGS = -10V,
VDS = 25V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
pF
2