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DN2540N3-G 参数 Datasheet PDF下载

DN2540N3-G图片预览
型号: DN2540N3-G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用: 晶体小信号场效应晶体管开关输入元件
文件页数/大小: 8 页 / 814 K
品牌: SUPERTEX [ Supertex, Inc ]
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DN2540
Product Marking
DN
2540
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
3-Lead TO-92 (N3)
DN5DW
DN2540N5
LLLLLLLLL
YYWW
L = Lot Number
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
3-Lead TO-220 (N5)
W = Code for week sealed
3-Lead TO-243AA (N8)
Thermal Characteristics
Package
TO-92
TO-220
TO-243AA
I
D
(continuous)
(mA)
(1)
I
D
(pulsed)
(mA)
Power Dissipation
@T
C
= 25 C
(W)
O
Θ
jc
(
O
C/W)
Θ
ja
(
O
C/W)
I
DR(1)
(mA)
I
DRM
(mA)
120
500
170
500
500
500
1.0
15
1.6
(2)
125
8.3
15
170
70
78
(2)
120
500
170
500
500
500
Notes:
(1) I
D
(continuous) is limited by max rated T
j
.
(2) Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
A
@ 25
O
C unless otherwise specified)
Sym
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Parameter
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Min
400
-1.5
-
-
-
-
150
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
17
-
325
200
12
1
Max
-
-3.5
4.5
100
10
1.0
-
25
1.1
-
300
30
5
pF
Units
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
Conditions
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
DS
= 25V, I
D
= 10µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -10V
V
DS
= 0.8 Max Rating,
V
GS
= -10V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 120mA
V
GS
= 0V, I
D
= 120mA
V
DS
= 10V, I
D
= 100mA
V
GS
= -10V,
V
DS
= 25V,
f = 1MHz
2