DN2530
Thermal Characteristics
Package
TO-243AA
TO-92
I
D
(continuous)
1
200mA
175mA
I
D
(pulsed)
500mA
500mA
Power Dissipation
@T
A
= 25
O
C
1.6W
2
0.74W
Θ
jc
(
O
C/W)
15
125
Θ
ja
(
O
C/W)
78
2
170
I
DR1
200mA
175mA
I
DRM
500mA
500mA
Notes:
1. I
D
(continuous) is limited by max rated T
j
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
300
-1.0
-
-
-
-
200
-
-
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
800
-
-3.5
4.5
100
10
1.0
-
12
1.1
-
300
30
5
10
15
15
20
1.8
-
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
pF
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
DS
= 25V, I
D
= 10µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -10V
V
DS
= 0.8 Max Rating,
V
GS
= -10V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 150mA
V
GS
= 0V, I
D
= 150mA
V
DS
= 10V, I
D
= 150mA
V
GS
= -10V,
V
DS
= 25V,
f = 1MHz
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= -10V, I
SD
= 150mA
V
GS
= -10V, I
SD
= 1.0A
ns
V
ns
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
R
L
OUTPUT
90%
INPUT
-10V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
SUPERTEX [ Supertex, Inc ]
