DN2470
Thermal Characteristics
Package
TO-252
I
D(continuous)
*
170mA
I
D(pulsed)
500mA
Power Dissipation
@ T
A
=25°C
2.5W**
θ
JC
°C/W
6.25
θ
JA
°C/W
50**
I
DR
*
170mA
I
DRM
500mA
* I
D(continuous)
is limited by maximum rated T
J
of 150°C
** Mounted on FR4, 25mm x 25mm x 1.57mm
Electrical Characteristics
Symbol
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
(@25°C unless otherwise specified)
Parameter
Drain-to-Source
Breakdown Voltage
Gate-to-Source OFF Voltage
Change in V
GS(OFF)
with Temperature
Gate Body Leakage
Drain-to-Source Leakage Current
Saturated Drain-to-source Current
Static Drain-to-Source ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Min
700
-1.5
Typ
Max
Units
V
Conditions
V
GS
=-5V, I
D
=100µA
V
DS
=25V, I
D
=10µA
V
DS
=25V, I
D
=10µA
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, V
DS
=Max Rating
V
GS
=-10V, V
DS
=0.8 Max
Rating, T
A
=125°C
V
GS
=0V, V
DS
=25V
V
GS
=0V, I
D
=100mA
V
GS
=0V, I
D
=100mA
I
D
=100mA, V
DS
=10V
V
GS
=-10V, V
DS
=25V
f=1MHz
V
DD
=25V,
I
D
=100mA,
R
GEN
=25
Ω
V
GS
=0V, I
SD
=200mA
V
GS
=0V, I
SD
=200mA
-3.5
4.5
100
1.0
1.0
500
42
1.1
V
mV/°C
nA
µA
mA
mA
Ω
%/°C
mmho
pF
100
540
60
25
30
45
45
60
1.8
800
ns
V
ns
Notes:
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2) All AC parameters sample tested.
Switching Waveforms and Test Circuit
0V
Input
-10V
10%
t
(ON)
t
d(ON)
V
DD
Output
0V
90%
90%
10%
t
r
t
(OFF)
t
d(OFF)
t
f
10%
Input
Pulse
Generator
R
GEN
90%
V
DD
R
L
OUTPUT
D.U.T
Doc# DSFP-DN2470
NR011905
2
Rev. 1
011105
SUPERTEX [ Supertex, Inc ]
